- NAND Flash
- Samsung V-NAND
- Controller
- Samsung In-house Controller
- Cache Memory
- HMB (Host Memory Buffer)
- Random Read
- Up to 700,000 IOPS
- Random Write
- Up to 1,100,000 IOPS
- Encryption
- AES 256-bit, TCG/Opal V2.0, IEEE1667 Encrypted Drive
- TRIM Support
- Yes
- S.M.A.R.T Support
- Yes
- Garbage Collection
- Supported
- Device Sleep Mode
- Supported
- Key Features
- Samsung V-NAND, In-house Controller, HMB Cache, AES 256-bit Encryption, TRIM & S.M.A.R.T Support, Up to 700K/1,100K IOPS Performance
Click to expand
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